Method for designing mask set, recording medium, template, and method for manufacturing template

ABSTRACT

According to an embodiment, a method for designing a mask set is provided. In the method for designing the mask set, an imprint-alignment mark is arranged in a region other than a chip region in an imprint shot formed in a template. The imprint-alignment mark is used for alignment during an imprint. Subsequently, the shape of the imprint shot is set based on an arrangement position of the imprint-alignment mark. Subsequently, another pattern is arranged in a region where the region is other than the chip region in the imprint shot and the imprint-alignment mark is not arranged. The other pattern is used in a process other than the imprint.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2013-162723, filed on Aug. 5, 2013; theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a method for designinga mask set, recording medium, template, and method for manufacturingtemplate.

BACKGROUND

Conventionally, photolithography has been used in almost all patterntransfer processes during fabrication of a semiconductor apparatus.Therefore, conventionally, a mask set applied to a photomask is used. Ina shot arrangement on a wafer in this photolithography process, scribeline regions between adjacent shots are arranged to overlap one another.

However, in an imprint (an imprint lithography process) using jet andflash imprint lithography, the resist is hardened on the wafer for eachone shot. Accordingly, in the imprint, in the case where patterning isperformed such that respective scribe line regions overlap one anotherbetween adjacent shots, the template is imprinted onto a region wherethe resist is already hardened. As a result, riding up of pattern ontothe adjacent shot occurs. Thus, the scribe line regions cannot bearranged overlapping one another on the wafer between adjacent shots.

As described above, a method for forming a pattern on a scribe linediffers between the imprint and the photolithography. This poses aproblem for mix-and-match between the template and the photomask.Therefore, it has been difficult to apply the imprint to the fabricationof the semiconductor apparatus. Then, it is desired to facilitatedesigning the mask set that includes the imprint.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to a first embodiment;

FIGS. 2A and 2B are flowcharts illustrating a processing procedure ofmask-set designing processing according to the first embodiment;

FIGS. 3A to 3C are diagrams illustrating an exemplary configuration ofimprint marks;

FIG. 4A is a diagram illustrating an initial state of an imprint shot;

FIG. 4B is a diagram illustrating a state where the imprint marks aretemporarily arranged with respect to the imprint shot;

FIG. 4C is a diagram illustrating a state where an imprint shot shape isset with respect to the imprint shot;

FIG. 4D is a diagram illustrating a state where other patterns arearranged with respect to the imprint shot;

FIG. 5 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to a second embodiment;

FIGS. 6A and 6B are flowcharts illustrating a processing procedure ofmask-set designing processing according to the second embodiment;

FIG. 7 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to a third embodiment;

FIG. 8A is a flow chart illustrating a processing procedure ofpattern-arrangement processing in the mask-set designing processing;

FIG. 8B is a flow chart illustrating a processing procedure ofpattern-arrangement adjusting processing in a chipped shot in themask-set designing processing;

FIG. 9 is a view for describing the arrangement adjusting processing ofthe imprint mark protruding from the wafer;

FIGS. 10A and 10B are diagrams illustrating a protruding region with afirst pattern-arrangement inhibited region;

FIGS. 11A and 11B are diagrams illustrating a protruding region with asecond pattern-arrangement inhibited region; and

FIG. 12 is a diagram illustrating a hardware configuration of themask-set designing apparatus.

DETAILED DESCRIPTION

According to an embodiment, a method for designing a mask set isprovided. In the method for designing the mask set, an imprint-alignmentmark is arranged in a region other than a chip region in an imprint shotformed in a template. The imprint-alignment mark is used for alignmentduring an imprint. Subsequently, the shape of the imprint shot is setbased on an arrangement position of the imprint-alignment mark.Subsequently, another pattern is arranged in a region where the regionis other than the chip region in the imprint shot and theimprint-alignment mark is not arranged. The other pattern is used in aprocess other than the imprint.

Exemplary embodiments of a method for designing a mask set, recordingmedium, template, and method for manufacturing template will bedescribed below in detail with reference to the accompanying drawings.The present invention is not limited to the following embodiments.

First Embodiment

FIG. 1 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to a first embodiment. A mask-setdesigning apparatus 10A is, for example, a computer for designing a maskset that includes an imprint. The mask-set designing apparatus 10Aperforms, for example, arrangement processing of an imprint mark (animprint mark 20 described later) on a scribe line, setting processing ofan imprint shot shape, and arrangement processing of a pattern otherthan the imprint mark 20 (other patterns 30 described later).

The mask-set designing apparatus 10A designs a mask set that arepatterns used in a pattern transfer process during fabrication of asemiconductor apparatus. The mask-set designing apparatus 10A arrangesscribe patterns (mask set patterns) on a scribe line (dicing line) in animprint shot, so as to design a mask set. The scribe line is arrangedbetween regions where respective semiconductor chips are formed (circuitpattern regions).

The scribe patterns input to the mask-set designing apparatus 10Aincludes, for example, a positioning mark for imprint (alignment mark),a positioning mark for exposure, an overlay (OL) inspection mark, and aTest Element Group (TEG).

During imprint and during exposure, a positioning mark formed on a lowerlayer side is used for positioning a pattern on an upper layer side. Forexample, during imprint, the positioning mark generated on the lowerlayer side by imprint or exposure is used for positioning the pattern onthe upper layer side. During exposure, the positioning mark generated onthe lower layer side by imprint or exposure is used for positioning thepattern on the upper layer side.

The OL inspection mark is a mark used for measuring an overlaydisplacement between the pattern on the upper layer side and the patternon the lower layer side. The overlay displacement between an OLinspection mark formed on the lower layer side and an OL inspection markformed on the upper layer side is measured so as to measure the overlaydisplacement between the upper and lower layers. The OL inspection marksinclude an OL inspection mark for an imprint process and an OLinspection mark for an exposure process. The OL inspection mark for theimprint process is used in an overlay displacement inspection after theimprint process. The OL inspection mark for the exposure process is usedin an overlay displacement inspection after the exposure process. TheTEG is a test pattern for measuring parameters related to electricalcharacteristics of the semiconductor apparatus.

In the following description, a description will be given of the scribepatterns separated into the imprint marks 20 and the other patterns 30other than the imprint mark 20. The imprint mark 20 is a positioningmark for imprint (wafer alignment mark). The other patterns 30 include,for example, the positioning mark for exposure, the OL inspection markfor the exposure process, the OL inspection mark for the imprintprocess, and the TEG. The other pattern 30 is a pattern on a scribe lineof a photomask for mix-and-match with an imprint.

The mask-set designing apparatus 10A arranges respective patterns of thescribe patterns (mask set) such that each scribe pattern formed in apattern transfer process does not affect (for example, not overlap)scribe patterns formed in another pattern transfer process.

The mask-set designing apparatus 10A of this embodiment sets a shotshape for imprint (the imprint shot shape) to a shape of a jigsaw-puzzlepiece (jigsaw form). In other words, the mask-set designing apparatus10A sets a region with scribe patterns on a scribe line (protrudingregion) and a region without any scribe pattern (depressed region).Here, the protruding region is a portion protruding from a rectangularregion at the center portion of the imprint shot in top view. Thedepressed region is a portion without any protruding region at the outerperipheral portion of the imprint shot in top view. The mask-setdesigning apparatus 10A arranges the protruding regions and thedepressed regions such that the protruding region and the depressedregion overlap one another, yet the respective protruding regions do notoverlap one another between adjacent imprint shots.

Specifically, the mask-set designing apparatus 10A arranges theprotruding regions and the depressed regions such that the protrudingregion and the depressed region face each other across a chip region. Inother words, the mask-set designing apparatus 10A sets an imprint shotshape such that the outer peripheral portion of the imprint shot has anuneven portion as a combination of a region that allows patternarrangement and a region that does not allow pattern arrangement.Furthermore, the mask-set designing apparatus 10A sets an imprint shotshape such that the protruding region and the depressed region in theuneven portion fit each other so as to constitute a scribe line betweenimprint shots to be adjacent to each other when the imprint shots arearranged.

The mask-set designing apparatus 10A includes a scribe-pattern inputunit 11, a chip-region input unit 12, an arrangement-condition inputunit 13, a pattern arrangement unit 14A, an imprint-mark setting unit15, and an output unit 17.

The scribe-pattern input unit 11 receives scribe patterns and transmitsthese scribe patterns to the imprint-mark setting unit 15. The data ofthe scribe patterns input to the scribe-pattern input unit 11 includesinformation indicative of the layer on which the scribe patterns areformed, information indicating which of imprint or photolithography isused to transfer each pattern of the scribe patterns, a pattern shape,pattern dimensions, and similar information.

The chip-region input unit 12 receives a chip region of thesemiconductor chip and transmits this chip region to the patternarrangement unit 14A. The chip region is a region where a circuitpattern that constitutes the semiconductor chip is formed (chipdimensions and the number of chips within one shot).

The arrangement-condition input unit 13 receives arrangement conditionsand transmits these arrangement conditions to the imprint-mark settingunit 15. The arrangement conditions include, for example, restrictingconditions during arrangement of the scribe patterns. The arrangementconditions include, for example, (Arrangement Condition 1) to(Arrangement Condition 4) as follows.

(Arrangement Condition 1) The number of arrangement positions of theimprint marks 20 set in each layer(Arrangement Condition 2) Restriction on the arrangement positions ofthe imprint marks 20(Arrangement Condition 3) Restriction on a scribe line shape(Arrangement Condition 4) Restriction on arrangement positions of theother patterns 30

The imprint-mark setting unit 15 specifies a layer to be imprinted,based on the scribe patterns. The imprint-mark setting unit 15 sets, forexample, the arrangement number of the imprint marks 20 for each layerto be imprinted, based on the arrangement conditions. The imprint-marksetting unit 15 transmits the scribe patterns, the arrangementconditions, the set arrangement number (N pieces) of the imprint marks20, and similar information to the pattern arrangement unit 14A.

The pattern arrangement unit 14A sets a scribe line betweensemiconductor chips in the imprint shot and a scribe line arranged inthe outer peripheral portion of the imprint shot, based on thearrangement conditions and the chip region.

The pattern arrangement unit 14A temporarily arranges N pieces of theimprint marks 20 on the scribe line between the semiconductor chipregions or on the scribe line set in the outer peripheral portion of theimprint shot, based on the arrangement conditions. In the subsequentprocess, the imprint mark 20 is moved as necessary. Accordingly, in thecase where the imprint mark 20 is not moved in the subsequent process,the arrangement of the imprint marks 20 here is set as a permanentarrangement, not as temporary arrangement.

The pattern arrangement unit 14A sets the imprint shot shape (theprotruding region and the depressed region) such that the temporarilyarranged imprint marks 20 are arranged on the scribe line. In otherwords, the pattern arrangement unit 14A sets the imprint shot shape suchthat the temporarily arranged imprint marks 20 are arranged within theprotruding region.

After setting the imprint shot shape, the pattern arrangement unit 14Aarranges the other patterns 30 of the scribe patterns in the remainingregions on the scribe line. The pattern arrangement unit 14A checkswhether or not all the other patterns 30 can be arranged in the setimprint shot. In the case where the arrangement is not possible, thepattern arrangement unit 14A adjusts the arrangement of the imprintmarks 20 or the other patterns 30. The pattern arrangement unit 14Aarranges all the scribe patterns in the imprint shot, and transmitsarrangement data as a mask set to the output unit 17. The output unit 17outputs the mask set to an external device or similar device.

Next, a description will be given of a design processing procedure ofthe mask set according to the first embodiment. FIGS. 2A and 2B areflowcharts illustrating a processing procedure of mask-set designingprocessing according to the first embodiment. FIG. 2A illustratesarrangement processing of the imprint marks 20 and the other patterns 30in the mask-set designing processing. FIG. 2B illustrates thearrangement adjusting processing of the imprint marks 20 or the otherpatterns 30 in the mask-set designing processing.

The scribe-pattern input unit 11 receives the scribe patterns, andtransmits these scribe patterns to the imprint-mark setting unit 15. Thearrangement-condition input unit 13 receives the arrangement conditions,and transmits these arrangement conditions to the imprint-mark settingunit 15. The chip-region input unit 12 receives the chip region of thesemiconductor chip, and transmits this chip region to the patternarrangement unit 14A.

The imprint-mark setting unit 15 specifies a layer to be imprinted,based on the scribe patterns. Specifically, the imprint-mark settingunit 15 extracts the imprint marks 20 formed by the imprint from thescribe patterns, and determines a layer corresponding to the extractedimprint marks 20 as an imprint-application layer (in step S10).

The imprint-mark setting unit 15 sets, for example, the arrangementnumber (N pieces) of the imprint marks 20 based on the arrangementcondition 1 (in step S20). The arrangement condition 1 specifies, forexample, eight positions or four positions as the number of arrangementpositions of the imprint marks 20. The imprint-mark setting unit 15transmits a scribe line pattern, the arrangement conditions, and the setimprint marks 20 to the pattern arrangement unit 14A.

FIGS. 3A to 3C are diagrams illustrating an exemplary configuration ofthe imprint marks. The imprint marks includes a one-dimensional mark anda two-dimensional mark. FIG. 3A and FIG. 3B each illustrate a top viewof a one-dimensional mark. FIG. 3C illustrates a top view of atwo-dimensional mark. FIG. 3A illustrates an imprint mark 21X with anarrangement in the X direction. FIG. 3B illustrates an imprint mark 21Ywith an arrangement in the Y direction. FIG. 3C illustrates an imprintmark 21XY with arrangements in the X direction and the Y direction.

In the imprint mark 21X as one example of the imprint mark 20, linepatterns 25 that extend in the Y direction are arranged parallel to oneanother in the Y direction. In the imprint mark 21Y as one example ofthe imprint mark 20, line patterns 26 that extend in the X direction arearranged parallel to one another in the X direction. In the imprint mark21XY as one example of the imprint mark 20, line patterns 28 that extendin the Y direction are arranged parallel to one another in the Ydirection and line patterns 27 that extend in the X direction arearranged parallel to one another in the X direction.

The pattern arrangement unit 14A sets a scribe line between thesemiconductor chips in the imprint shot and a scribe line arranged inthe outer peripheral portion of the imprint shot, based on thearrangement conditions and the chip region.

FIG. 4A to FIG. 4D are diagrams for describing setting processing of theimprint shot. FIG. 4A to FIG. 4D each illustrate a top view of theimprint shot. Here, the case where four chip regions 31 are arranged inimprint shots 1 to 4 will be described.

FIG. 4A is a diagram illustrating the initial state of the imprint shot.The pattern arrangement unit 14A sets a scribe line 33 between the chipregions 31 in the imprint shot 1 and a scribe line 32 arranged in theouter peripheral portion of the imprint shot 1. This state where thechip regions 31 and the scribe lines 32 and 33 are set is the initialstate of the imprint shot (the imprint shot 1).

Subsequently, the pattern arrangement unit 14A temporarily arranges theimprint marks 20 on the scribe lines 32 and 33 based on the arrangementconditions (in step S30). Steps S10 to S30 described above are atemporary arrangement process of the imprint marks 20.

FIG. 4B is a diagram illustrating a state where the imprint marks aretemporarily arranged with respect to the imprint shot. The imprint shot2 is an imprint shot after the temporary arrangement process of theimprint marks. The pattern arrangement unit 14A temporarily arrangesregions where the imprint marks 20 are arranged(imprint-mark-arrangement regions 33A to 33H) in the imprint shot 1, soas to temporarily arrange the imprint marks 20.

Here, the imprint-mark-arrangement regions 33A to 33H protrude from thescribe line 32. However, the actual imprint-mark-arrangement regions 33Ato 33H are regions within the scribe line 32.

Here, a description will be given of arrangement processing of theimprint mark 20 in the case where an imprint process is performed in twolayers. In the case where an imprint process is performed in two layers,two imprint marks 20 are arranged for each of theimprint-mark-arrangement regions 33A to 33H. The imprint marks 20 ineach of the imprint-mark-arrangement regions 33A to 33H includes theimprint mark 20 in a first layer at one side and the imprint mark 20 ina second layer at the other side.

The pattern arrangement unit 14A arranges the imprint-mark-arrangementregions 33A to 33H, for example, on the scribe line 32 based on thearrangement condition 2. The arrangement condition 2 specifies that, forexample, the imprint marks 20 (the imprint-mark-arrangement regions) arearranged at the proximity of four corners of the imprint shot 1.Specifically, it is specified that, for example, the imprint marks 20are arranged in positions within a predetermined distance from fourapexes of the imprint shot 1 in the imprint shot 2. Additionally, thearrangement condition 2 specifies, for example, the distance between theimprint marks 20 (distance to be separated).

Additionally, the arrangement condition 2 specifies that, for example,the respective imprint marks 20 are not arranged in positions facing oneanother in the X direction via the chip regions 31 or not arranged inpositions facing one another in the Y direction via the chip regions 31.In other words, it is specified that, for example, the imprint marks 20are arranged such that the imprint marks 20 do not overlap one anotherbetween adjacent imprint shots.

Specifically, a pair of the imprint marks 20 is arranged in positionsfacing each other in the X direction via both the chip region 31 and thescribe line 33. Subsequently, the Y coordinate of the imprint mark 20 atone side is slightly moved. A pair of the imprint marks 20 is arrangedin positions facing each other in the Y direction via both the chipregion 31 and the scribe line 33. Subsequently, the X coordinate of theimprint mark 20 at one side is slightly moved.

For example, in the case where the pattern arrangement unit 14A arrangesimprint-mark-arrangement regions 33A and 33F, the pattern arrangementunit 14A arranges the imprint-mark-arrangement region 33A and thenarranges the imprint-mark-arrangement region 33F in a position facingthe imprint-mark-arrangement region 33A in the Y direction via both thechip region 31 and the scribe line 33. In this case, the patternarrangement unit 14A arranges the imprint-mark-arrangement regions 33Aand 33F in the respective positions that have the same X coordinate anddifferent Y coordinates on the scribe line 32. Subsequently, the patternarrangement unit 14A shifts the X coordinate of theimprint-mark-arrangement region 33F such that the X coordinate of theimprint-mark-arrangement region 33A and the X coordinate of theimprint-mark-arrangement region 33F do not overlap each other at all.Accordingly, the imprint-mark-arrangement regions 33A and 33F arearranged in the positions illustrated in FIG. 4B.

The pattern arrangement unit 14A sets the imprint shot shape (theprotruding region and the depressed region) such that the temporarilyarranged imprint marks 20 remain on the scribe line 32. In other words,the pattern arrangement unit 14A disposes cut-out portions (thedepressed regions) in a part of the imprint shot shape such that thetemporarily arranged imprint marks 20 are arranged within the protrudingregions. At this time, the pattern arrangement unit 14A sets the imprintshot shape based on the arrangement condition 3.

The arrangement condition 3 specifies that, for example, the imprintshot shape is set such that the regions where theimprint-mark-arrangement regions 33A to 33H are arranged on the scribeline 32 are included in the protruding regions. Additionally, thearrangement condition 3 specifies that, for example, the imprint shotshape is set such that the regions where the imprint-mark-arrangementregions 33A to 33H are not arranged on the scribe line 32 are includedin the depressed regions.

Accordingly, the pattern arrangement unit 14A sets the imprint shotshape such that, on the scribe line 32, the region where theimprint-mark-arrangement regions 33A to 33H are arranged are included inthe protruding regions, and the regions where theimprint-mark-arrangement regions 33A to 33H are not arranged areincluded in the depressed regions (in step S40). This step S40 is ashot-shape setting process.

FIG. 4C is a diagram illustrating a state where the imprint shot shapeis set with respect to the imprint shot. The imprint shot 3 is animprint shot after an imprint-shot-shape setting process.

For example, the pattern arrangement unit 14A sets a protruding region35A that includes the imprint-mark-arrangement regions 33A and 33H, andsets a protruding region 35B that includes the imprint-mark-arrangementregion 33B. The pattern arrangement unit 14A also sets, for example, aprotruding region 35C that includes the imprint-mark-arrangement region33C, and sets a protruding region 35D that includes theimprint-mark-arrangement region 33D. The pattern arrangement unit 14Aalso sets, for example, a protruding region 35E that includes theimprint-mark-arrangement regions 33E and 33F, and sets a protrudingregion 35F that includes the imprint-mark-arrangement region 33G. Thepattern arrangement unit 14A also sets, for example, a protruding region35G in a position where the imprint-mark-arrangement regions 33A to 33Hare not arranged on the scribe line 32. Accordingly, at least oneprotruding region among the protruding regions includes the imprint mark20.

Furthermore, the pattern arrangement unit 14A sets a region at which theprotruding regions 35A to 35G are not set on the scribe line 32, as adepressed region. Accordingly, the protruding regions 35A to 35G arearranged in the positions illustrated in FIG. 4C.

The pattern arrangement unit 14A may set the depressed regions and thenset the protruding regions. In this case, the pattern arrangement unit14A sets the depressed region in a position where theimprint-mark-arrangement regions 33A to 33H are not arranged on thescribe line 32, and then sets the protruding regions 35A to 35G inpositions other than the depressed region.

The pattern arrangement unit 14A sets the imprint shot shape, and thenarranges the other patterns 30 in a region remaining on the scribe lines32 and 33 using the scribe patterns (in step S50). At this time, thepattern arrangement unit 14A arranges the other patterns 30 based on thearrangement condition 4. The arrangement condition 4 specifies, forexample, the number of arrangement positions of the other patterns 30and the restriction on the arrangement positions of the other patterns30.

FIG. 4D is a diagram illustrating a state where the other patterns arearranged with respect to the imprint shot. The imprint shot 4 is animprint shot after the other-pattern arrangement process. For example,the pattern arrangement unit 14A arranges the other patterns 30 inpositions where the imprint-mark-arrangement regions 33A to 33H are notarranged on the protruding regions of the scribe line 32, or on thescribe line 33. In the case where the other pattern 30 are arranged inthe protruding region of the scribe line 32, the imprint mark 20 and theother pattern 30 are arranged in at least one protruding region amongthe protruding regions.

The pattern arrangement unit 14A checks whether or not all the otherpatterns 30 can be arranged in the imprint shot 3. Specifically, thepattern arrangement unit 14A checks whether or not all the necessaryscribe patterns (the imprint marks 20 and the other patterns 30) havebeen arranged (in step S60).

In the case where all the scribe patterns cannot be arranged (No in stepS60), the pattern arrangement unit 14A performs arrangement adjustingprocessing of the imprint marks 20 or the other patterns 30 (processingin Sub1). Specifically, the processing illustrated in FIG. 2B isperformed.

The pattern arrangement unit 14A determines whether or not all thescribe patterns can be arranged with respect to the current imprint shotshape (in step S61). In the case where it is determined that there arescribe patterns that cannot be arranged for the current imprint shotshape (No in step S61), the pattern arrangement unit 14A modifies theimprint shot shape (in step S62).

Subsequently, the pattern arrangement unit 14A determines whether or notall the scribe patterns can be arranged for the current (modified)imprint shot shape (in step S61). The pattern arrangement unit 14Arepeats the processings in step S62 and step S61 until it is determinedthat all the scribe patterns can be arranged for the current imprintshot shape.

In the case where it is determined that all the scribe patterns can bearranged for the current imprint shot shape (Yes in step S61), thepattern arrangement unit 14A adjusts the arrangement of the imprintmarks 20 for the current imprint shot shape (in step S63). Furthermore,the pattern arrangement unit 14A adjusts the arrangement of the otherpatterns 30 for the current imprint shot shape (in step S64).

Subsequently, the pattern arrangement unit 14A checks whether or not allthe necessary scribe patterns has been arranged (in step S60). Thepattern arrangement unit 14A repeats the processing in Sub1 (in stepsS61 to S64) and the processing in step S60 until all the necessaryscribe patterns has been arranged.

The pattern arrangement unit 14A arranges all the necessary scribepatterns in the imprint shot 3 (Yes in step S60) so as to complete theimprint shot 4, and then terminates designing the mask set. Step S60 andSub1 described above are the other-pattern arrangement process.

The pattern arrangement unit 14A transmits data for arrangement of thescribe patterns (data of the imprint shot 4) to the output unit 17 as amask set. The output unit 17 outputs the mask set to, for example, theexternal device.

When the mask pattern of the semiconductor apparatus is created for eachlayer, the circuit pattern for each layer is arranged within an imprintshot 5 (not shown). Additionally, the scribe patterns (the imprint marks20 and the other patterns 30) for each layer are arranged on the scribeline within the imprint shot 5. At this time, the scribe patterns foreach layer are arranged based on a mask set designed by the mask-setdesigning apparatus 10A. Specifically, the scribe patterns for eachlayer are arranged based on the set arrangement positions of the scribepatterns to the mask set.

Subsequently, the imprint shot 5 is used to produce a template (masterplate). The template is used to imprint a wafer (substrate). The imprinton the wafer is performed for each imprint shot.

According to the first embodiment, the imprint shape is set after theimprint marks 20 are temporarily arranged. Subsequently, the otherpatterns 30 are arranged. This facilitates designing the mask set thatincludes imprint.

In the case where there is a scribe pattern that cannot be arranged forthe current imprint shot shape, the pattern arrangement unit 14Amodifies the imprint shot shape. This facilitates arranging the scribepatterns for the imprint shot shape.

The imprint marks 20 and the other patterns 30 are arranged based on thearrangement conditions 1 to 4. Accordingly, with arrangementrestrictions on a layer where an imprint is used (an imprint layer) anda layer where an exposure treatment is used (a photomask layer) takeninto consideration, a mask set that allows mix-and-match between theimprint layer and the photomask layer is obtained.

Second Embodiment

Next, a second embodiment will be described using FIG. 5 and FIGS. 6Aand 6B. In the second embodiment, a mask set is designed after it isverified whether the imprint shots on the substrate do not overlap oneanother between the adjacent shots when performing an imprint using theimprint shot shape of the designed imprint shot 4.

Hereinafter, an imprint shot where the design is completed is describedas the imprint shot 4. An imprint shot to be arranged (imprinted) on thewafer is described as an imprint shot 6X.

FIG. 5 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to the second embodiment. In respectiveconfiguration members of FIG. 5, the same reference numerals are givento configuration members that achieve the same functions as those in themask-set designing apparatus 10A of the first embodiment illustrated inFIG. 1, and the repeated description will be omitted correspondingly.

A mask-set designing apparatus 10B has a function to verify whether theimprint shots 6X do not overlap one another between the adjacent shots(a shot-shape verifying unit 18B described later), compared with themask-set designing apparatus 10A.

Specifically, the mask-set designing apparatus 10B includes thescribe-pattern input unit 11, the chip-region input unit 12, thearrangement-condition input unit 13, a pattern arrangement unit 14B, theimprint-mark setting unit 15, the output unit 17, and the shot-shapeverifying unit 18B.

The pattern arrangement unit 14B has a function similar to that of thepattern arrangement unit 14A. The pattern arrangement unit 14B of thisembodiment transmits the set imprint shot shape to the shot-shapeverifying unit 18B. Additionally, the pattern arrangement unit 14B setsa new imprint shot shape when the pattern arrangement unit 14B hasreceived a verification result of disqualification from the shot-shapeverifying unit 18B.

The shot-shape verifying unit 18B is coupled to the pattern arrangementunit 14B. In the case where the protruding regions and the depressedregions that are set to the imprint shot shape have unsuitable shapes,the imprint shots 6X overlap one another between the adjacent shots.Therefore, the shot-shape verifying unit 18B verifies whether or not theimprint shots 6X overlap one another between the adjacent shots in thecase where an imprint is performed on the wafer using the imprint shotshape set by the pattern arrangement unit 14B. The shot-shape verifyingunit 18B transmits the verification result to the pattern arrangementunit 14B.

Next, a description will be given of a design processing procedure of amask set according to the second embodiment. FIGS. 6A and 6B areflowcharts illustrating a processing procedure of mask-set designingprocessing according to the second embodiment. FIG. 6A illustratesarrangement processing of the imprint marks 20 and the other patterns 30in the mask-set designing processing. FIG. 6B illustrates verificationprocessing of the imprint shot shape in the mask-set designingprocessing. Here, in the processing procedure illustrated in FIG. 6A,the repeated description of the processing similar to that in FIG. 2Awill be omitted.

The mask-set designing apparatus 10B determines an imprint-applicationlayer using processing similar to that of the mask-set designingapparatus 10A (in step S10), and sets the arrangement number of theimprint marks 20 (in step S20). The mask-set designing apparatus 10Btemporarily arranges the imprint marks 20 using the processing similarto that of the mask-set designing apparatus 10A (in step S30), anddetermines an imprint shot shape (in step S40).

Subsequently, the pattern arrangement unit 14B transmits the set imprintshot shape to the shot-shape verifying unit 18B. Thus, the shot-shapeverifying unit 18B performs the verification processing of the imprintshot shape (processing in Sub2). Specifically, the processingillustrated in FIG. 6B is performed.

The shot-shape verifying unit 18B verifies whether the imprint shots 6Xdo not overlap one another between the adjacent shots when performing animprint on the wafer using the imprint shot shape (in step S71). Theshot-shape verifying unit 18B transmits the verification result to thepattern arrangement unit 14B.

In the case where the verification result indicates disqualification,the shot-shape verifying unit 18B may transmit the verification resultincluding information that indicates which of the positions isdisqualified (a position where overlap occurs in the imprint shot 4) tothe pattern arrangement unit 14B.

In the case where the imprint shots 6X overlap one another between theadjacent shots (No in step S71), the pattern arrangement unit 14Bmodifies the imprint shot shape (in step S72). At this time, in the casewhere the pattern arrangement unit 14B has received the information thatindicates which of the positions is disqualified from the shot-shapeverifying unit 18B, the pattern arrangement unit 14B modifies theimprint shot shape based on this information.

The pattern arrangement unit 14B and the shot-shape verifying unit 18Brepeat the processings in step S72 and step S71 until a verificationresult becomes qualified. In the case where the imprint shots 6X do notoverlap one another between the adjacent shots (Yes in step S71), theverification result becomes qualified. Then, the processing in Sub2 (ashot-shape modification process) is terminated.

Subsequently, the pattern arrangement unit 14B arranges the otherpatterns 30 in regions remaining on the scribe lines 32 and 33 usingprocessing similar to that of the pattern arrangement unit 14A (in stepS50). Furthermore, the pattern arrangement unit 14B checks whether ornot all the scribe patterns are arranged using processing similar tothat of the pattern arrangement unit 14A (in step S60).

In the case where all the scribe patterns cannot be arranged (No in stepS60), the pattern arrangement unit 14B performs arrangement adjustingprocessing of the imprint marks 20 or the other patterns 30 (processingin Sub1) using processing similar to that of the pattern arrangementunit 14A.

In this embodiment, after the pattern arrangement unit 14B completes theprocessing in Sub1 (after step S64), the processing in Sub2 isperformed. Specifically, the pattern arrangement unit 14B and theshot-shape verifying unit 18B perform the processings in steps S71 andS72. In the case where the imprint shots 6X do not overlap one anotherbetween the adjacent shots (Yes in step S71), the verification result isqualified. Then, the processing in Sub2 is terminated.

Subsequently, the pattern arrangement unit 14B uses the scribe patternsto arrange the other patterns 30 in regions remaining on the scribelines 32 and 33, using processing similar to that of the patternarrangement unit 14A (in step S50).

Subsequently, the pattern arrangement unit 14A checks whether or not allthe necessary scribe patterns are arranged (in step S60). The mask-setdesigning apparatus 10B repeats the processing in Sub1 (in steps S61 toS64), the processing in Sub2 (in steps S71 and S72), and the processingsin steps S50 and S60 until all the necessary scribe patterns has beenarranged. The pattern arrangement unit 14B arranges all the necessaryscribe patterns in the imprint shot 3 (Yes in step S60) so as tocomplete the imprint shot 4, and then terminates designing the mask set.

According to the second embodiment, it is verified whether the adjacentimprint shots 6X do not overlap one another. In the case where theoverlap occurs, the pattern arrangement unit 14A modifies the imprintshot shape. This facilitates arranging the scribe patterns for theimprint shot shape.

Third Embodiment

Next, a third embodiment will be described using FIG. 7 to FIG. 12. Inthe third embodiment, it is verified whether or not the imprint mark 20protrudes from the wafer in the peripheral portion of the wafer. In thecase where the imprint mark 20 protrudes, the position of the imprintmark 20 is changed.

FIG. 7 is a block diagram illustrating a configuration of a mask-setdesigning apparatus according to the third embodiment. In respectiveconfiguration members of FIG. 7, the same reference numerals are givento configuration members that achieve the same functions as those in themask-set designing apparatus 10A of the first embodiment illustrated inFIG. 1, and the repeated description will be omitted correspondingly.

A mask-set designing apparatus 10C has a function to verify whether ornot the imprint mark 20 protrudes from the wafer in the peripheralportion of the wafer (a chipped-shot verifying unit 19C describedlater), compared with the mask-set designing apparatus 10A.

Specifically, the mask-set designing apparatus 10C includes thescribe-pattern input unit 11, the chip-region input unit 12, thearrangement-condition input unit 13, a pattern arrangement unit 14C, theimprint-mark setting unit 15, the output unit 17, anarrangement-information input unit 16C, and a chipped-shot verifyingunit 19C.

The arrangement-information input unit 16C receives an arrangement ofthe imprint shots 6X on the wafer (shot-arrangement information) anddefault positions for the imprint marks 20 that are preliminary arrangedwithin the imprint shot 1 (mark-arrangement information), and transmitsthese inputs to the chipped-shot verifying unit 19C.

The mark-arrangement information is information indicative of anarrangement of the imprint marks 20 in the imprint shot 1 in the initialstate. Accordingly, the mark-arrangement information includesinformation related to the scribe line 33 between the chip regions 31within the imprint shot 1 and information related to the scribe line 32arranged in the outer peripheral portion of the imprint shot 1.

The chipped-shot verifying unit 19C verifies whether there is an imprintmarks 20 protruding from the wafer in the imprint shot 6X, which isimprinted onto the peripheral portion of the wafer. Since the wafer tobe imprinted has a circular shape, there is an imprint shot 6X that doesnot completely include a transfer-pattern region in the peripheralportion of the wafer. This type of imprint shot 6X that includes theregion protruding from the wafer is a chipped shot.

The chipped-shot verifying unit 19C verifies the existence of thechipped shot based on the shot-arrangement information and themark-arrangement information. Furthermore, in the case where a chippedshot exists, the chipped-shot verifying unit 19C extracts the imprintmark 20 that is not transferred onto the wafer among the imprint marks20 within the chipped shot. The chipped-shot verifying unit 19Ctransmits the verification result to the pattern arrangement unit 14C.

The pattern arrangement unit 14C has a function similar to that of thepattern arrangement unit 14A. Additionally, when the pattern arrangementunit 14C receives the verification result (the position of the imprintmark 20 protruding from the wafer) from the chipped-shot verifying unit19C, the pattern arrangement unit 14C moves the position of the imprintmark 20 protruding from the wafer to a transferrable region within thechipped shot.

Next, a description will be given of a design processing procedure of amask set according to the third embodiment. Here, a description will begiven of a processing procedure of mask-set designing processingaccording to the third embodiment using FIG. 8A and FIG. 8B. FIG. 8A isa flow chart illustrating a processing procedure of pattern-arrangementprocessing in the mask-set designing processing. FIG. 8B is a flow chartillustrating a processing procedure of pattern-arrangement adjustingprocessing in the chipped shot in the mask-set designing processing.Here, in the processing procedure illustrated in FIG. 8A, the repeateddescription of the processing similar to that in FIG. 2A or FIG. 6A willbe omitted.

The imprint-mark setting unit 15 of the mask-set designing apparatus 10Cdetermines an imprint-application layer using processing similar to thatof the mask-set designing apparatus 10A (in step S10). Subsequently, thechipped-shot verifying unit 19C performs verification processing of thechipped shot (processing in Sub3). Specifically, the processingillustrated in FIG. 8B is performed.

The arrangement-information input unit 16C receives the shot-arrangementinformation and the mark-arrangement information, and transmits them tothe chipped-shot verifying unit 19C. The chipped-shot verifying unit 19Cverifies the existence of the chipped shot based on the shot-arrangementinformation and the mark-arrangement information. The shot-arrangementinformation may be generated by another device other than the mask-setdesigning apparatus 100, or may be generated by the chipped-shotverifying unit 19C.

In the case where the chipped-shot verifying unit 19C generates theshot-arrangement information, the chipped-shot verifying unit 19Cgenerates the shot-arrangement information based on the shape and thedimensions of the imprint shot 4 and the dimensions of the transferrableregion on the wafer. In this case, the chipped-shot verifying unit 19Cacquires the shape and the dimensions of the imprint shot 4 from thepattern arrangement unit 14C. The dimensions of the transferrable regionon the wafer may be input from an external device or similar device tothe chipped-shot verifying unit 19C through the arrangement-informationinput unit 16C, or may be input from a user to the chipped-shotverifying unit 19C through the arrangement-information input unit 16C.

In the case where a chipped shot exists, the chipped-shot verifying unit19C checks the number and the positions of the imprint marks 20 that arenot transferred onto the wafer among the imprint marks 20 within thechipped shot (in step S11).

The chipped-shot verifying unit 19C extracts the number and thepositions of the imprint marks 20 that are not transferred onto thewafer, and then transmits this extraction result to the patternarrangement unit 14C. The pattern arrangement unit 14C determineswhether or not the number of the imprint marks 20 in the transferrableregion within the chipped shot is equal to or more than the specifiednumber (for example, four) (in step S12).

The specified number of the imprint marks 20 may be any number. Forexample, the specified number may be defined to be twelve in total offour one-dimensional marks in the X direction, four one-dimensionalmarks in the Y direction, and four two-dimensional marks. The number oftwo-dimensional marks may be three as the specified number.

In the case where the number of the imprint mark 20 in the transferrableregion within the chipped shot is not equal to or more than thespecified number (No in step S12), the pattern arrangement unit 14Cmoves the imprint marks 20 within the imprint shot 1 such that thenumber of the imprint marks 20 in the transferrable region within thechipped shot becomes equal to or more than the specified number (here,four pieces) (in step S13).

Specifically, the pattern arrangement unit 14C moves the imprint marks20 within the imprint shot 1 such that the imprint marks 20 protrudingfrom the transferrable region on the wafer becomes contained in thetransferrable region on the wafer. Here, the pattern arrangement unit14C may add new imprint marks 20 within the transferrable region so asto arrange the specified number or more of the imprint marks 20 withinthe transferrable region of the imprint shot 1.

FIG. 9 is a view for describing the arrangement adjusting processing ofthe imprint mark protruding from the wafer. Here, a description will begiven of the case where imprint marks 50A and 50B as examples of theimprint mark 20 are moved to arrange imprint marks 51A and 51B.

For example, an imprint shot 6 a as an example of the imprint shot 6X isassumed to be a chipped shot. Among the imprint marks within the imprintshot 6 a, the imprint marks 20 within a wafer edge line (the transferboundary) 55 are transferred onto a wafer WA. The imprint marks 50A and50B outside of the wafer edge line 55 are not transferred onto the waferWA.

In this case, the pattern arrangement unit 14C moves the imprint marks50A and 50B within the imprint shot 1 such that the imprint marks 50Aand 50B that protrude from the wafer WA become contained in positionswithin the wafer WA (transferrable regions within the imprint shot 6 a).

The pattern arrangement unit 14C moves the imprint mark 50A disposed onthe scribe line 32 onto the scribe line 33, so as to arrange a newimprint mark 51A. Additionally, the pattern arrangement unit 14C movesthe imprint mark 50B disposed on the scribe line 32 onto the scribe line32, so as to arrange a new imprint mark 51B.

Regarding all the chipped shots, the pattern arrangement unit 14C movesthe imprint marks 50A and 50B that protrude from the wafer WA, so as toarrange the new imprint marks 51A and 51B. In other words, the patternarrangement unit 14C performs the moving processing of the imprint marksfor all the chipped shots.

The pattern arrangement unit 14C moves or adds the imprint marks 20, andthen determines whether or not the number of the imprint marks 20 withinthe transferrable region of the chipped shot is equal to or more thanthe specified number (in step S12). In the case where the number of theimprint marks 20 within the transferrable region of the chipped shot isequal to or more than the specified number (Yes in step S12), thepattern arrangement unit 14C determines whether or not there is anyimprint mark 20 (unnecessary mark) that is not used in all the imprintshots 6X on the wafer (in step S14).

In the case where there is an imprint mark 20 that is not used in allthe imprint shots 6X on the wafer (Yes in step S14), the patternarrangement unit 14C removes the unnecessary mark from the imprint shot4 (in step S15).

Subsequently, the pattern arrangement unit 14C determines whether thereis an imprint mark 20 that is not used (the unnecessary mark) in all theimprint shots 6X on the wafer (in step S14). In the case where there isno unnecessary mark (No in step S14), the pattern arrangement unit 14Cterminates the processing in Sub3 (chipped-shot verification process).Accordingly, the imprint mark 20 that has not been moved and the imprintmarks 50A and 50B that have been arranged by the movement are arrangedon the imprint shot 1. The arrangement positions of these imprint marks20, 50A, and 50B are used as the initial arrangement to design theimprint shot 4.

Specifically, processing similar to that described in the secondembodiment (FIG. 6A) is used to design the imprint shot 4. In this case,the processings in steps S20 to S40, the processing in Sub2, theprocessings in steps S50 and S60, and the processing in Sub1 areperformed.

The mask-set designing apparatus 10C may design the imprint shot 4 usingprocessing similar to the processing described in the first embodiment(FIG. 2A). In this case, the processings in steps S20 to S60 and theprocessing in Sub1 are performed.

The chipped-shot verifying unit 19C and the pattern arrangement unit 14Cmay perform the processing in Sub3 after temporarily arranging theimprint marks (after step S30). In this case, the chipped-shot verifyingunit 19C uses the positions of the imprint marks 20 temporarily arrangedin the imprint shot 2 as default positions (the mark-arrangementinformation) to perform the processing in Sub3.

In the case where the shot-arrangement information is generated byanother device other than the mask-set designing apparatus 10C, thepattern arrangement unit 14C needs not set the scribe line 33 betweenthe chip regions 31 within the imprint shot 1 and needs not set thescribe line 32 arranged in the outer peripheral portion of the imprintshot 1. The pattern arrangement unit 14C acquires information of theimprint shot 1 to which the chip region 31 and the scribe lines 32 and33 are set, from the shot-arrangement information.

Incidentally, in the protruding regions set for the scribe line 32, atthe outer peripheral portions, a desired template pattern might not beformed due to process accuracy during the template formation. Forexample, the template with a process error may cause an overlap of theadjacent imprint shots 6X one another during the imprint. That is, inthe case where, for example, the template becomes larger than desireddimensions, the adjacent imprint shots 6X overlap one another.

Accordingly, the pattern arrangement unit 14C of this embodiment doesnot arrange the imprint marks 20 or the other patterns 30 in the outerperipheral region (a first pattern-arrangement inhibited region) on theimprint shot 4 corresponding to the outer peripheral region of theimprint shot 6X. Specifically, the pattern arrangement unit 14C disposesthe first pattern-arrangement inhibited region in the protruding region,and then arranges the imprint marks 20 and the other patterns 30 inregions other than the first pattern-arrangement inhibited region.

In top view of the imprint shot 6X, a region at a corner (an apex of theprotruding region) may have a cross-sectional shape in a rounded shapeor a mesa shape (corner rounding) due to etching process accuracy whenthe template pattern is etched.

Accordingly, the pattern arrangement unit 14C of this embodiment doesnot arrange the imprint marks 20 or the other patterns 30 in a cornerregion (a second pattern-arrangement inhibited region) on the imprintshot 4 corresponding to a corner region of the imprint shot 6X.Specifically, the pattern arrangement unit 14C disposes the secondpattern-arrangement inhibited region in the protruding region, and thenarranges the imprint marks 20 and the other patterns 30 in regions otherthan the second pattern-arrangement inhibited region.

FIGS. 10A and 10B are diagrams illustrating a protruding region with thefirst pattern-arrangement inhibited region. A protruding region 36Aillustrated in FIG. 10A corresponds to the protruding region 35Aillustrated in FIG. 4C with the first pattern-arrangement inhibitedregion (an inhibited region 41A). Here, disposing the inhibited region41A narrows the region for arranging the imprint marks 20 and the otherpatterns 30. Accordingly, the protruding region 36A may be formed largerthan the protruding region 35A.

The protruding region 36G illustrated in FIG. 10B corresponds to theprotruding region 35G illustrated in FIG. 4C with the firstpattern-arrangement inhibited region (an inhibited region 41G). Here,disposing the inhibited region 41G narrows the region for arranging theimprint marks 20 and the other patterns 30. Accordingly, the protrudingregion 36G may be formed larger than the protruding region 35G.

FIGS. 11A and 11B are diagrams illustrating a protruding region with thesecond pattern-arrangement inhibited region. A protruding region 37Aillustrated in FIG. 11A corresponds to the protruding region 35Aillustrated in FIG. 4C with the first pattern-arrangement inhibitedregion (the inhibited region 41A) and the second pattern-arrangementinhibited region (an inhibited region 42A). Here, disposing theinhibited regions 41A and 42A narrows the region for arranging theimprint marks 20 and the other patterns 30. Accordingly, the protrudingregion 37A may be formed larger than the protruding region 35A. In theprotruding region 37A, only the inhibited region 42A may be formedwithout disposing the inhibited region 41A.

The protruding region 37G illustrated in FIG. 11B corresponds to theprotruding region 35G illustrated in FIG. 4C with the inhibited region41G and an inhibited region 42G. Here, disposing the inhibited regions41G and 42G narrows the region for arranging the imprint marks 20 andthe other patterns 30. Accordingly, the protruding region 37G may beformed larger than the protruding region 35G. In the protruding region37G, only the inhibited region 42G may be disposed without disposing theinhibited region 41G.

After the mask set has been designed, this mask set is used to fabricatea semiconductor apparatus (a semiconductor integrated circuit).Specifically, the mask set is used to produce a photomask or a templatefor each layer. At this time, the template is produced for theimprint-application layer while the photomask is produced for a layer (aphotolithography-application layer) other than the imprint-applicationlayer.

Subsequently, in the photolithography-application layer, the wafer overwhich resist is applied is exposed using the photomask. Then, the waferis developed so as to form a resist pattern on the wafer. Subsequently,etching is performed using this resist pattern as a mask, so as to forman actual pattern corresponding to the resist pattern on the wafer.

In the imprint-application layer, the wafer over which resist is appliedis imprinted using the template, so as to form a resist pattern on thewafer. Subsequently, etching is performed using this resist pattern as amask, so as to form an actual pattern corresponding to the resistpattern on the wafer.

When the semiconductor apparatus is fabricated, after theabove-described mask set is designed, formation of a resist patternusing the photomask or the template, etching process, and a similarprocess are repeated for each layer.

Next, a description will be given of hardware configurations of themask-set designing apparatuses 10A to 10C. The mask-set designingapparatuses 10A to 10C have the hardware configurations similar to oneanother. Here, a description will be given of the hardware configurationof the mask-set designing apparatus 10A.

FIG. 12 is a diagram illustrating the hardware configuration of themask-set designing apparatus. The mask-set designing apparatus 10Aincludes a Central Processing Unit (CPU) 91, a Read Only Memory (ROM)92, a Random Access Memory (RAM) 93, a display unit 94, and an inputunit 95. In the mask-set designing apparatus 10A, the CPU 91, the ROM92, the RAM 93, the display unit 94, and the input unit 95 are coupledto one another through a bus line.

The CPU 91 uses a mask-set designing program 97 as a computer program todesign the mask set. The mask-set designing program 97 is a computerprogram product that includes a nontransitory computer readable mediumstoring a plurality of computer-executable instructions for designingthe mask set. With the mask-set designing program 97, the plurality ofinstructions causes the computer to execute designing of the mask set.

The display unit 94 is a display device such as an LCD monitor, anddisplays, for example, the scribe patterns and the imprint shots 1 to 4based on the instruction from the CPU 91. The input unit 95 includes acomputer mouse and a keyboard, and inputs the instruction information(parameters necessary for designing the mask set) externally input fromthe user. The instruction information input to the input unit 95 istransmitted to the CPU 91.

The mask-set designing program 97 is stored in the ROM 92, and is loadedto the RAM 93 through the bus line. FIG. 12 illustrates the mask-setdesigning program 97 that is loaded to the RAM 93.

The CPU 91 executes the mask-set designing program 97 loaded in the RAM93. Specifically, in the mask-set designing apparatus 10A, the CPU 91reads out the mask-set designing program 97 from the inside of the ROM92 in accordance with the instruction input from the input unit 95 bythe user, and then expand the mask-set designing program 97 to a programstorage region in the RAM 93, so as to execute various processings. TheCPU 91 temporarily stores various data generated during the variousprocessings in a data storage region formed in the RAM 93.

The mask-set designing program 97 executed in the mask-set designingapparatus 10A has a module configuration that includes the imprint-marksetting unit 15 and the pattern arrangement unit 14A. These units areloaded onto a main storage unit, and these units are generated on themain storage unit.

The mask-set designing program 97 to be executed in the mask-setdesigning apparatus 10B described in the second embodiment has a moduleconfiguration that includes the imprint-mark setting unit 15, thepattern arrangement unit 14B, and the shot-shape verifying unit 18B.

The mask-set designing program 97 to be executed in the mask-setdesigning apparatus 10C described in the third embodiment has a moduleconfiguration that includes the imprint-mark setting unit 15, thepattern arrangement unit 14C, and the chipped-shot verifying unit 19C.

Thus, according to the third embodiment, it is verified whether there isan imprint mark 20 protruding from the wafer in the chipped shot. In thecase where the imprint mark 20 protruding from the wafer exists, thepattern arrangement unit 14C changes the position of the imprint mark20. This facilitates arranging the scribe patterns for the imprint shotshape.

Additionally, the imprint mark 20 is moved or added based on theposition of the imprint mark 20 in the chipped shot. This improvesalignment accuracy with respect to the chipped shot. Additionally, theimprint mark 20 is arranged in the proximity of the four corners of theimprint shot 1. This allows obtaining high alignment accuracy withrespect to a full shot of the imprint.

In the first and second pattern-arrangement inhibited regions, theimprint marks 20 and the other patterns 30 are not arranged. Thisprevents an incomplete scribe pattern on the template.

Conventionally, the imprints cannot include a shared portion betweenadjacent shots. Thus, it was impossible that the imprints overlap oneanother. Accordingly, in the case where an imprint is applied to a maskset (a mask set for photolithography) with shot arrangement where theadjacent shots share a scribe line, it had been necessary that thephotomask and the imprint be different in shot shape or shot size. Inthe case where the shot shape and the shot size are different from oneanother, the respective pattern arrangements on the scribe line differfrom each other. Therefore, it was impossible that an imprint is simplyreplaced and performed only in an application-target layer.

In the first to third embodiments, the imprint shot shape is set afterthe imprint marks 20 are temporarily arranged. Subsequently, the otherpatterns 30 are arranged. Accordingly, the first to third embodimentsfacilitate designing the mask set that includes the photomask and theimprint.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

1. A method for designing a mask set, comprising: arranging animprint-alignment mark in a region other than a chip region in animprint shot formed in a template, the imprint-alignment mark being usedfor alignment during an imprint; setting a shape of the imprint shotbased on an arrangement position of the imprint-alignment mark; andarranging another pattern in a region where the region is other than thechip region in the imprint shot and the imprint-alignment mark is notarranged, the other pattern being used in a process other than theimprint.
 2. The method for designing the mask set according to claim 1,wherein the shape of the imprint shot is set based on an arrangementrestriction on the imprint-alignment mark.
 3. The method for designingthe mask set according to claim 1, wherein the shape of the imprint shotis set such that: when the imprint shot is viewed from a top, theimprint shot includes an outer peripheral portion with an unevenportion, the uneven portion being a combination of a region allowingpattern arrangement, and a region not allowing pattern arrangement; anda protruding region and a depressed region in the uneven portion fit oneanother to constitute a scribe line between adjacent imprint shots whenthe imprint shots are arranged.
 4. The method for designing the mask setaccording to claim 3, wherein the imprint-alignment mark and the otherpattern are arranged in at least one protruding region among theprotruding regions, and the other pattern includes at least one of anoverlay inspection mark, an exposure alignment mark, and a TEG pattern,the overlay inspection mark being used for inspection of an overlaydisplacement between a pattern formed at an upper layer side and apattern formed at a lower layer side, the exposure alignment mark beingused for alignment during exposure.
 5. The method for designing the maskset according to claim 1, further comprising checking that the imprintshots do not overlap one another between adjacent imprint shots when theimprint shots are arranged.
 6. The method for designing the mask setaccording to claim 1, further comprising: setting an inhibited regionwhere the imprint-alignment mark and the other pattern are not arranged,in a region not in contact with the chip region in an outer peripheralportion of the protruding region; and arranging the imprint-alignmentmark and the other pattern in a region except the inhibited region inthe protruding region.
 7. The method for designing the mask setaccording to claim 1, further comprising: extracting a chipped shotwhere a part of a transferrable region is chipped in the imprint shot byprotruding a part of the imprint shot from a substrate when the imprintshot is arranged on the substrate; determining whether or not the numberof the imprint-alignment marks that do not protrude is smaller than apredetermined number in a case where the imprint-alignment markprotrudes from the substrate in the chipped shot, the predeterminednumber being set in advance; and moving the imprint-alignment mark thatprotrudes from the substrate or adding a new imprint-alignment mark suchthat the number of the imprint-alignment marks that do not protrudebecomes equal to or more than the predetermined number in a case wherethe number of the imprint-alignment marks that do not protrude issmaller than the predetermined number. 8.-20. (canceled)